Partial derivatives - transistor hybrid model, Electrical Engineering

Partial derivatives - Transistor hybrid model:

The partial derivatives are taken by keeping the collector voltage or base current constant as pointed out by the subscript attached to the derivative.

ΔvB , ΔvC ,  Δ iC , Δ iB present the small signal(increment) base and collector voltages and currents, they are presented by symbols   vb , vc , ib and  ic correspondingly. 

 Eqs (3) and (4) may be written like as follow:

             Vb = hie ib + hre Vc                                                                 

              ic = hfe ib + hoe Vc

in which   hie =(∂f1/∂iB)Vc =  (∂vB/∂iB)Vc = (ΔvB /ΔiB)Vc = (vb / ib)Vc         

                  hre =(∂f1/∂vc)IB   =  (∂vB/∂vc) IB = (ΔvB /Δvc) IB = (vb /vc) IB

 

                hfe  =(∂f2/∂iB)Vc =  (∂ic /∂iB)Vc = (Δ ic /ΔiB)Vc = (ic / ib)Vc

                hoe= (∂f2/∂vc)IB   =  (∂ic /∂vc) IB = (Δ ic /Δvc) IB = (ic /vc) IB

The above equations described the h-parameters of the transistor in CE configuration. Similar theory can be extended to transistors in additional configurations.

Hybrid Model and Equations for the transistor in three dissimilar configurations are displayed below.

662_Partial derivatives - Transistor hybrid model.png

Posted Date: 1/11/2013 4:45:10 AM | Location : United States







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