Major advantages of fet transistors over bjt transistors, Electrical Engineering

Q. What the major advantages FET transistors over BJT transistors?

a. BJT transistor (bipolar junction transistor) is a bipolar device - the prefix bi-revealing that the conduction level is a function of two charge carriers, electrons and holes where as the FET is a unipolar device depending solely on electron or hole conduction.

b. For the FET an electric field is established by the charges present that will control the conduction path of the output circuit without the need for direct contact between the controlling and controlled quantities.

c. FET has high input impedance. This permits high degree of isolation between input and output circuits.

d. FETs are more temperature stable than BJTs.

e. FETs are usually smaller in construction than BJTs, making them particularly useful in integrated-circuit (IC) chips.

f. A FET has a negative temperature coefficient of resistance. This avoids the risk of thermal runaway.

g. Compared to BJT a FET has a longer life period and high efficiency

h. In FET, there are no junctions as in an ordinary transistor. The conduction is through an n-type or p-type semiconductor material. For this reason, noise level in FET is small.

Posted Date: 6/12/2013 1:58:37 AM | Location : United States







Related Discussions:- Major advantages of fet transistors over bjt transistors, Assignment Help, Ask Question on Major advantages of fet transistors over bjt transistors, Get Answer, Expert's Help, Major advantages of fet transistors over bjt transistors Discussions

Write discussion on Major advantages of fet transistors over bjt transistors
Your posts are moderated
Related Questions
Branch Operations Normally  the program  executes in  a sequence. The contents of the program counter register are incremented by  one during  the execution  of current  instr

An audiomessage is band-limited to 15 kHz, sampled at twice the Nyquist rate, and encoded by a 12-bit natural binary code that corresponds to Lb = 212 = 4096 levels, all of which s

Q. Two shunt generators operate in parallel to supply a total load current of 3000 A. Each machine has an armature resistance of 0.05and a field resistance of 100. If the generat

how does a zener diode works

Q. If a feeder circuit-breaker trips, what action is needed? Ans: First isolate the faulty feeder check the faulty area on which fault the breaker was tripped (open circuit,

Q. On a per-phase basis, let v = √2 V cos ωt and i = √2 I cos (ωt - θ). (a) Express the instantaneous power s(t) in terms of real power P and reactive power Q. (b) Now consid

Considering the TTL NAND gate circuit of Figure, with one or more inputs low, show that the output will be high.

Figure show two first-order triangular finite elements used to solve the Laplace equation for electrostatic potential. Find a local S -matrix for each triangle, and a global S -m

I want proof of shockley diode equation with all steps

expain how to do proper initial approximatio for the given cct....... by a example