Light triggering - power semiconductor devices , Electrical Engineering

Light Triggering

When  light is  thrown  on silicon the hole electron pair get excited an increases hence  the leakage  current of J2  increases which  will increase IC1 and IC2  and α1 + α2   tends to unity  on the SCR.

Posted Date: 4/2/2013 7:52:41 AM | Location : United States







Related Discussions:- Light triggering - power semiconductor devices , Assignment Help, Ask Question on Light triggering - power semiconductor devices , Get Answer, Expert's Help, Light triggering - power semiconductor devices Discussions

Write discussion on Light triggering - power semiconductor devices
Your posts are moderated
Related Questions
RAR  Rotate Accumulator Right Through Carry Instruction This instruction rotates the contents  of the  accumulator  towards right by  one bit. The D 7   bit moves to D 6 posi

Problem: Jyoti Textile is considering whether to add a new product to its range. Machinery costing $280,000 would have to be bought at the start of the project (Year 0). The pr

Transistor Hybrid model:- Make Use of h - parameters to explain a transistor have the following benefits. a)      h - Parameters are real numbers that are up to radio frequ

Analogue Threshold switching a) Include a variable potential divider to the schematic diagram to control the transistor base voltage b) Include the potential divider compon

(a) What are the elements of Flexible Manufacturing Systems? (b) What are the basic types of workstations typically found in an FMS. Describe them briefly?


Q. Accelerator and Investment? Accelerator, Investment: Investment spending stimulates economic growth that consecutively stimulates further investment spending (as businesses

Q. Sketch the timing diagram for a 4-bit ripple counter which uses T flip-flops.

Q. What do you mean by Most and least significant digits? The MSD (most significant digit) in a number is the digit which represents the largest part of the number. Therefore i

Draw a graph illustrating how resistivity varies with temperature for an intrinsic semiconductor. b) Gallium nitride, GaN, has an energy gap of 3.36 eV at 300 K. Calculate the w