Junction diode summary, Other Engineering

The PN junction region of the Junction Diode has the following significant characteristics:

  • Semiconductors contain two types of mobile charge carriers, Electrons and Holes.
  • The electrons negatively charged while holes are positively charged.
  • A semiconductor can be doped with donor impurities like Antimony (N-type doping), so that it contains mobile charges which are the primarily electrons.
  • A semiconductor can be doped with the acceptor impurities such as Boron (P-type doping), so that it contains mobile charges which are majorly holes.
  • The junction region itself has no charge carriers and is called as the depletion region.
  • The junction region has physical thickness which varies with the applied voltage.
  • When the diode is Zero Biased no external energy source is applied and a natural Potential Barrier is developed across the depletion layer which is about 0.5 to 0.7v for silicon diodes and about 0.3 of a volt for germanium diodes.
  • When the junction diode is Forward Biased thickness of the depletion region reduces and the diode acts as a short circuit allowing full current to flow.
  • When the junction diode is Reverse Biased thickness of the depletion region increases and the diode behaves like an open circuit blocking any current flow, (only a small leakage current). 
Posted Date: 9/3/2012 9:19:00 AM | Location : United States







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