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Junction diode summary, Other Engineering
The PN junction region of the
has the following significant characteristics:
Semiconductors contain two types of mobile charge carriers,
Electrons and Holes
The electrons negatively charged while holes are positively charged.
A semiconductor can be doped with donor impurities like Antimony (N-type doping), so that it contains mobile charges which are the primarily electrons.
A semiconductor can be doped with the acceptor impurities such as Boron (P-type doping), so that it contains mobile charges which are majorly holes.
The junction region itself has no charge carriers and is called as the depletion region.
The junction region has physical thickness which varies with the applied voltage.
When the diode is
no external energy source is applied and a natural
is developed across the depletion layer which is about 0.5 to 0.7v for silicon diodes and about 0.3 of a volt for germanium diodes.
When the junction diode is
thickness of the depletion region reduces and the diode acts as a short circuit allowing full current to flow.
When the junction diode is
thickness of the depletion region increases and the diode behaves like an open circuit blocking any current flow, (only a small leakage current).
Posted Date: 9/3/2012 9:19:00 AM | Location : United States
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