Impurities in semiconductors, Electrical Engineering

Impurities in Semiconductors

  1. Can be added in accurately controlled amounts.
  2. Can modify the electronic and optical properties.
  3. Used to change conductivity over wide ranges.
  4. Can even change conduction process from conduction via negative charge carriers to positive charge carriers and vice versa.
  5. Controlled the addition of impurities doping.
Posted Date: 1/11/2013 2:50:23 AM | Location : United States

Related Discussions:- Impurities in semiconductors, Assignment Help, Ask Question on Impurities in semiconductors, Get Answer, Expert's Help, Impurities in semiconductors Discussions

Write discussion on Impurities in semiconductors
Your posts are moderated
Related Questions
Explain  the  suitability  of  copper that  is  used  as  electrical  conducting materials. Copper : Pure annealed is utilized for the winding of electrical machines. High pur

Most ac generators used in Power Stations are of the " Flux Cutting " types. Their effiencies range from less than 33% to slightly more than 60%. In their efficiency equations, the

Q. For the circuit of Figure, determine and sketch i L (t) and vC(t) for inductance values of (a)3/4 H, (b) 2/3 H, and (c) 3/17 H. Note that the inductance values are chosen her

The electric roadway system shall utilize solar energy as the main power source. The electric roadway system shall negotiate with the power utility on backup power supply.

Give some applications of Hall Effect. Applications of Hall Effect: 1. This is used for finding whether a semi-conductor is N-type or P-type. 2. This is used in finding

A burglar alarm system is controlled by a microprocessor system. The system has three independent circuit each consisting of 7 passive infra red sensors. The controller can be prog

Q. Show the Amenability to computer processing? Due to the digital data collected and stored in the form of a matrix, the same becomes amenable to processing on computers. By f

Thermal considerations: At continuous current, the voltage across the emitter-base junction V BE of a bipolar transistor get decreases 2 mV (silicon) and 1.8mV (germanium) fo

A feedback control system with the configuration of Figure has the following parameters: K p = 0.5 V/rad, K a = 100 V/V, K m = 2.7 × 10 -4 N·m/V, J = 1.5 × 10 -5 kg·m 2 , and

In second technique, a concentrator expander (CE) is used near cluster of users and another one at exchange end as demonstrated in figure. Only a few junction lines are run between