Igbt - insulated gate bipolar transistor , Electrical Engineering

IGBT ( Insulated Gate Bipolar Transistor )

IGBT  stands for  insulated gate bipolar transistor. It is having the advantages of both power MOSFET and BJT.  In IGBT  layer is P   is used as a substrate. One  side is  deposited with metal layer to form  collector and other side of P  substrate N layer is epitaxial  grown.  The other layers are same as power MOSFET. The  three terminals of IGBT  are emitter E gate G and  collector C .

2405_IGBT.PNG

                                                                       figure IGBI Basic  structure   symbol

The  IGBT is a  four layer N-P-N-P device  with an  MOs gated channel  connecting  the two  N type regions. It is a new high conductance MOs  gate  controlled  power switch. In operation of IGBT the epitaxial region is conductivity  modulated  and thereby eliminating  a major  component of the on resistance. TGBT  maintains gate control   over a  wide  range  of anode  current  and voltage. The  basic  structure  of the IGB  is shown in figure.

In many  respect s it is  similar  to a power MOSFET main  difference  is the  presence of P+  as injecting  layer. Next  is N+  layer. There is a  P_N  junction between these layers and two  more junctions ( J2 and J3) .

 

                                                                  

 

Posted Date: 4/2/2013 5:28:04 AM | Location : United States







Related Discussions:- Igbt - insulated gate bipolar transistor , Assignment Help, Ask Question on Igbt - insulated gate bipolar transistor , Get Answer, Expert's Help, Igbt - insulated gate bipolar transistor Discussions

Write discussion on Igbt - insulated gate bipolar transistor
Your posts are moderated
Related Questions
Hi, I need help simulating my project in Proteus, problem is, I have never used it before. This is what I have so far. However, feel free to suggest ideas that will make the circ

A 15kVA has a turns ratio 1:10. If the voltage applied is 13.8kV and the applied load is 20+j6. Find the current in the secondary winding and the active and reactive power consumed


Explain the Tap Changing Transformers? This is the most popular form of voltage control at all voltage levels. It is based on changing the turns ratio of the transformer, hence

Buck Converter In buck  converters the output  voltage is  always  less than the  input  voltage. The basic  circuit  of buck converter is shown  in figure. The operation of th


what ie the use of mutual inductance in a hartley oscillator

Determine phase - voltage and power: A balanced star connected load is supplied from a symmetrical 3-phase 440 Volt system. The current in each of the phase is 40 Amp and lags

Most ac generators used in Power Stations are of the " Flux Cutting " types. Their effiencies range from less than 33% to slightly more than 60%. In their efficiency equations, the

Q. For themagnetic circuit shown in Figure, neglecting leakage and fringing, determine the mmf of the exciting coil required to produce a flux density of 1.6 T in the air gap. Them