Assume that an abrupt Si p-n junction with area 10-4 cm2 has NA=1017/cm3 and ND=1017/cm3 is working at room temperature. It is given that μn = 700 cm2/v-s, μP =250 cm2/ V-s and ζn- ζP = 1 μs. Assume that minority carrier mobility is same as the majority carrier mobility, Neglecting any recombination in the SCR region, determine:
(a) What will be current if the diode has a forward bias of 0.7V?
(b) What will be current if the diode has a reverse bias of 0.7V?
(c) Find the ratio of the forward to the reverse current.