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(a) A chopper controlled electric train is powered from a 1500 VDE supply. The power semi- conductor switch element has a minimum effectice ON time of 40 Ms. during starting and slowspeed running, the output of the chopper has to go as low as 15 V. what is the highest chopper frequency possible to satisfy this reqirement ?
(b) The chopper in (a) has a minimum effective OFF time of 30 Ms. The chapper frequency is 2000Hz(i) what is the maximum duty cycle and maximum output voltage possible?(ii) if the full input voltage is to be made available to theload, show how this can be done
The battery is made by connecting 5 unit cells in series and then by connecting 6 of these series cells in parallel. Each unit cell has the voltage of 1.25 V and the internal resistance if 2.2 Ohm.
A composite analog signal is given in the following expression: x(t)=1.2 sin(2pi60ft)+0.0001cos(2pi1ft) -If this signal was sampled at 1000 Hz, derive the expression for the sampled sequence x[n] with n being the sampling index.
The purpose of this experiment is to setup the MASM assembler and linker. This will allow you to write assembly language source files and create executable code, such as .EXE and .COM files
The design specifications for a simple inverting amplifier require an input resistance of 10kOhm and a voltage gain, A=-6.2 a) prepare a design using an ideal OpAmp b)If a real OpAmp with the properties: Ri=2MOhm, A=200k, Ro=75Ohm
a single phase 440V 80kW load with a lagging Pf of .8 is supplied through a feeder of .6+j1.6 ohms and a single phase 100 kVA, 220/440 V transformer. the equiv impedance of the transformer referred to the High Voltage side is 1.15+j4.5 ohm.
Write the formula for the magnetization volume current density J M and magnetization surface current density JMS in terms of magnetization vector M. 4. A sphere has permanent magnetization where is a positive constant.
a) An Si p+-n junction has A=1/100 cm^2 and N(donor)=10^15/cm^3 on the n side. Calculate junction capacitance with reverse bias of 10V. b) An abrupt p+-n junction is formed in Si with donor doping of Nd=10^15 / cm^3.
a voltage is given by v(t)=10sin(1000(pi)(t) + 30 degrees)V 1. use a cosine function to express v(t) in terms of t and the constant pi. find the frequency in hertz to two significant figures and appropriate units.
An unknown semiconductor has Eg = 1.1 eV and Nc = Nv. It is doped with 10^15 cm^-3 donors where the donor level is 0.2 eV below Ec. Given that Ef is 0.25 eV below Ec, calculate ni and the concentration of electrons and holes in the semiconductor ..
Solve Using Gauss-Seidel Method (Perform Four Iterations) Using the Gauss-Seidel method and the initial guess X1(0)=1, solve the following equation (x_1)^2 - 6x_1 + 2 = 0
A series-resonant RLC circuit has R = 80 (ohms), L=25mh, and C=10pF. A) Sketch and label the circuit. B) Find fo, the resonant frequency. C) At what frequency is impedance a minimum D) What is the magnitude of the impedance at this frequency
The power dissipated in the resistor is 80 W when connected to a 10V source. Find the total dissipated power when the same resistor is connected to a 5V source.
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