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A parallel-resonant RLC circuit has R = 75 I, L=50mh, and C=45pF. A) Sketch and label the circuit. B) Find fo, the resonant frequency. C) At what frequency is impedance a maximum? D) What is the magnitude of the impedance at this frequency? E)What is the magnitude of the impedance at 100 kHz?
A set of digital scales is required to measure a load of 1000 N with an accuracy of ±1 N. Determine the minimum output resolution of the required ADC.
The system uses a 7-cell reuse pattern. If the offered traffic per user is 0.03 Erlangs and the average number of calls per hour per user is 1.5, for an Erlang-C system with a probability of delaying a call being 5%, calculate the traffic load per..
A composite has a cross-sectional area of 320 mm2 and is subjected to a longitudinal load of 44,500 N. The continuous and aligned fiber-reinforced composite is to be produced consisting of 30 vol% aramid fibers and 70 vol% polycarbonate matrix.
The charge carried by an electron is ?1.60×10?19 C. Suppose that an electron moves through a voltage of 120V from the negative polarity to the positive polarity. How much energy is transferred Does the electron gain or lose energy
a carrier wave is frequency-modulated using a sinusoidal signal of frequency fm and amplitude Am. (a) determine the values of the modulation index beta for which the carrier component of the fm signal is reduced to zero. see the appendix for calcu..
Discuss the operation of a JFET, including the pinch off and gate-source cutoff voltage in your explanation. Discuss how you can tell whether an FET is operating in the ohmic region or the active region.
Calculate the output resistance of the device, dIC/dVC, for 0
The network voltage is 27 kV. The generator operates with an induced voltage, which is twice the rated line-to-neutral voltage. Calculate the power angle if the network receives an inductive reactive power of 50 MVA.
how does Intel's architecture differ from MiPS?
Fuel cell systems that also utilize the heat produced can achieve efficiencies approaching 80 percent , more than double of the gas-turbine based electruiical generation . Assume that 25 million houuseholds produce an average of 5 kw.
Bipolar Junction Transistor, A silicon n-p-n bipolar junction transistor is designed with emitter, base and collector doping levels of 10^19cm, 10^15cm and 5*10^17cm, respectively.
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