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A silicon semiconductor resistor is in the shape of a rectangular bar with a cross sectional area of 1x10^-6 cm^2 a length of 0.1 cm and is doped with a donor concentration of 5x10^16 cm^-3.
(a) Calculate the resistance of this resistor at 300K. The mobility is 1100 cm^2/Vs
(b) Calculate the current in the resistor if a bias of 5 volt is applied across the length of the device.
(c) What is the average electron drift velocity? (Hint E = V/L)
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Find the appropriate subchannel modulation format (note: the number of constellation points in the modulation mapping scheme should be the power of two).
A saturated npn transistor has a base to emitter applied voltage of 0.6V. The collector to emitter voltage is 0.2V. The collector current is 12mA
By that I mean, how does IM/IT help KL carry out day-to-day operations and transacting, how does it aid management processes, and does it enable KL product and service innovation?
Improve the controller designed in part by introducing a mechanism for the disturbance compensation at the plant input. Illustrate advantage of the improved controller by applying the fast varying piecewise constant reference input vector and sinu..
Use MATLAB to compute the inverse Laplace transform of X(s)=(s^2+2s+1)/(s(s+1)(s^2+10s+50)) and determine the value of x(t) in the steady state. How would you be able to obtain this value without computing the inverse? Explain.
A first-order circuit, having a gain of 10 at dc and a gain of 1 at infinite frequency, has its pole at 20 kHz. Find its transfer function.
Why developing software for wireless devices is challenging? List and briefly describe the two (2) reasons given in your textbook for why developing software for wireless devices is challenging.
Question about Subnets, An organization owns the network 200.1.1.0/24 and wants to form subnets for 4 departments, with hosts as follows
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