Already have an account? Get multiple benefits of using own account!
Login in your account..!
Remember me
Don't have an account? Create your account in less than a minutes,
Forgot password? how can I recover my password now!
Enter right registered email to receive password!
given the electron and hole concentrations for a 2 micro meter region of Silicon. At x=0 the concentration of electrons is 10^16 and the concentration of holes is 1.01x10^18. At x=2 micro meters the concentration of electrons is 10^4 and the concentrations of holes is 10^18. This information was given in a picture. In addition, there is a constant electric field of 20 V/cm present in the sample.
What is the total current density at x=0? What are the individual drift and diffusion components of the hole and electron current densities at x=1 micro meter? Assume the electron and hole mobilities are 350 and 150 cm^2/Vxs , respectively.
Discuss different applications that could use non-inverting and inverting amplifier circuits. Will the actual op amp characteristics cause any challenges if used for each application
2. What is the expected output frequency of a sample and hold system if fs= finput 3. Which is input frequencies will give an output frequency of 50 Hz when put through a sample and hold system if our sampling frequency is 488 Hz
Using the time independent one dimensional Schrodinger equation, find the expression of the allowed energy levels for an electron in infinite potential well of width Δz= L (i.e. solve the differential equation and apply B.C. to obtain En)
Design the basic interface circuit (using an op amp) for a temperature sensor that covers a range of 0 degrees to 70 degrees C if the output of the sensor is 2 mV/1C and the ADC voltage range is 0 to 4 V.
A sample of non-ideal gas is made to undergo an expansion process during which its pressure and volume are related as shown in the table below. The energy of the gas at the start and finish of the process is measured and found to be 5 and 3.2 Btu
Write an instruction sequence to set bits 3, 2, 1, and 0 of memory location at $1000 to 1 and leave the upper four bits of the same locations unchanged. use hcs12/9s12 to program.
The continuous-time counterpart to the N-point discrete-time MA filter is the I-interval continuous-time MA filter given by the input/output relationship y(t)=(1/I)*Integral of x(lamda) delta lambda where the bounds are from t-I
Data at a rate of 2 Mbps is to be transmitted via a pass-band communication system whose carrier frequency is 500MHz. A binary antipodal system with roll-off factor of 0.2 is used for this communication.
Interface binary Input Output devices to the microcontroller
An n-channel MOSFET has a thershold voltage (Vt) of 0.5 V and a width to length ratio (W/L) of 2. If the tansistor generator the curve bleow when the gate to source voltage (VGS) is 1.5V. I D = 0.12mA. VDS = 0.5 V.
A 100-KVA, 2500/125-V, 50-Hz, step-down transformer has the following parameters: RH= 1.5 ohm ,XH= 2.8 ohm , RL=15 m omh XL = 2.m ohm, ,RcH=3 k ohm, XmH = 5k ohm. The transformer delivers 85% of the rated load at a terminal voltage of 110V
Utilizing the rat stereotaxic atlas in the course materials, devise a surgical plan for implanting a Michigan type array
Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!
whatsapp: +1-415-670-9521
Phone: +1-415-670-9521
Email: [email protected]
All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd