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Find the worst-case dc output voltages of the inverting amplifier shown in Figure for vin = 0. The bias current ranges from 100 to 200 n A, the maximum offset current magnitude is 50 n A, and the maximum offset voltage magnitude is 4 mV.
Consider a disk that is scheduled using the Shortest Seek First (SSF) policy. At time t, let the disk have the following requests in its queue: Request Cylinder R1 45 R2 39 R3 49 R4 52 R5 69 R6 35 R7 3 R8 66.
Explain in one or two sentences the key reason why a CMOS Domino circuit is safer than an ordinary dynamic circuit when cascading several inseries
question 1a. the energy control program is also referred to as lockouttagout. define lockouttagoutb. state five
Consider the BJT differential amplifier when fed with a common-mode voltage VCM . As is often the case, the supply voltage VCC may not be pure dc but might include a ripple component vr of small amplitude and a frequency of 120 Hz.
Every 64 cycles, the circuit outputs the average ofthe past 64 input V values, then in the next cycle begins a new calculation (in other words, its behavior repeats). During the cycles when the circuit is not outputting the average, itshould outpu..
You have a computer with a 1 GHz processor (that executes each instruction in one clock cycle) and a memory system that always takes 50ns to access one word. How long does it take to execute the instruction a = b + c
Find the capacitor voltage (you choose referece direction force), the inductor current(you choose reference direction for iL,the energy stored in the capacitor, and the energy in the inductor.
Suppose a random process is X(t) = A[cos(2fot + T)] where A and Fo are constants and T is a random variable that is uniformly distributed over [0, 2p]. 1. Is X(t) wide-sense stationary 2. Find power spectral density of x(t).
A zero mean gaussian random vector X=(X1, X2)T has a covariance matrix given by K=[ 3 -1 -1 3 ] Find a transformation matrix A so that the vector Y=AX is a gaussian random vector with uncorrelated (and therefore independent) components of unity va..
Describe why the intrinsic carrier concentration changes with temperature. This would include from very cold temperatures to 600K+ temperatures. Why does an extrinsic semiconductor become intrinsic above ~ 500K
Vgs is the switchcontrol voltage. Find the switch on-resistance Rds and the voltageVds obtained when Vgs=5V and Id=1mA. If μp=0.5μn what must bethe PMOS device W/L to provide the same NMOS on-resistance. AssumeVtn=|Vtp|.
using the four basic application types introduced classify the following system and explain your classification a
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