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Annealing, an important step in semiconductor materials processing, can be accomplished by rapidly heating the silicon wafer to a high temperature for a short period of time. The schematic shows a method involv- ing the use of a hot plate operating at an elevated tem- perature Th. The wafer, initially at a temperature of Tw,i, is suddenly positioned at a gap separation distance L from the hot plate. The purpose of the analysis is to compare the heat fluxes by conduction through the gas within the gap and by radiation exchange between the hot plate and the cool wafer. The initial time rate of change in the temperature of the wafer, (dTw /dt)i, is also of interest. Approximating the surfaces of the hot plate and the wafer as blackbodies and assuming their diameter transfer modes and the effect of the gap distance on the heating process. Under what conditions could a wafer be heated to 900°C in less than 10 s?
A rectangular cross section alumina bar, E=415 GPas , v=0.23 of initial lengths 100mm in the x direction, 10mm in the y direction and 20mm in the z direction, is loaded in compression by a load of 50 kN applied in the x-direction. What are the strai..
A turbine uses steam at 25MPa and 650°C at the turbine inlet to generate 17.5MW of power. The steam enters the turbine at a rate of 90000kg/h. A portion of the steam passing through the turbine is removed for the purposes of feedwater heating (Figure..
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in cooling situations where the desired temperature range is large two refrigeration cycles can be stacked to create a
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