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An important advance in Si bipolar transistors is the use of polysilicon emitters. If a normal ohmic contact is made to an emitter, the injected minority density goes to zero at the ohmic contact boundary. In polysilicon emitters, heavily doped polysilicon forms the contact to the emitter. The minority density does not go to zero at the polysilicon contact, but decreases to zero well inside it. This allows one to have very thin emitter contacts for high-speed operation. Discuss the disadvantage of such a contact over a normal ohmic contact in a thin emitter. (Consider the emitter efficiency and how it is affected by a thin emitter by discussing the narrow p-n diode.)
Write a program that reads a file containing only integer, but some of the integers have embedded commas, as in 145,020. The program should copy the information to a new file, removing any commas from the information.
A solenoid is 25 cm long, 3 cm in diameter, and carries 4 A dc in its 400 turns. Its axis is perpendicular to a uniform magnetic field of 0.8 weber per square meter in air. Using an origin at the center of the solenoid, calculate the torque acting..
Determine the system fault kVA and the fault currents at the 415 V and 110 V busbars for short circuit faults on the transformer input or output terminals. Work in p.u. values of impedances.
design a logic program that will track the activity for one turnstile. there will be three inputs PHASEA, B and RESET. there will be no output. the program should be able to track 999 total guests.
Create a flowchart and pseudo-code for generating a report that prints all of the movies, with all movies made by the same director on one page, as well as the number of movies by each director.
For use in a liquid crystal display, you want an electrode that is transparent to all visible light. You decide to use a doped semiconducting oxide with a mobility of 10^(-2) m^2/V-s. What is the maximum conductivity you can expect from your oxid..
Consider the half-wave rectifier below. Assume the transformer output has amplitude 10.0 V and the diode forward voltage drop is zero. (a) What is the average output voltage (b) What's the RMS output voltage
A pn junction may be formed by depositing a single crystal film of uniformly doped p-silicon onto a substrate that has been doped n-type. The substrate is 500um thick, and the film is 20um thick. The substrate has a 5 ohm-cm resistivity.
Compute i2(t) through resist R, Find value of w0 for which the amplitude of the current |I2| is maximum, compute I2 for w=w0. compute the ratio of the amplitude of the voltage source over the amplitude of the voltage across the resistor.
The (uniform) area density of defects for a CMOS fabrication process is 0.1 cm-2. Estimate the yield for integrated circuits with the following dimension: 4mm x 4mm, 6mm x 8mm, and 9mm x 12mm.
determine power and limiting error of the power?
Determine the response of the system when aunit step is applied at input.
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