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1. Design a two-position controller that turns a 5-V light relay ON when a silicon photocell output drops to 0.22 V and OFF when the cell voltage reaches 0.78 V.
2. Design a two-position controller that provides an output of 5 V when a type-J TC junction reaches and drops to a low of 0 V when the temperature has fallen to . Assume a reference.
A BJT has beta =100,mod Aie=10 at 10 MHz and it is operating at a collector current of 5 mA.If transition capacitance =10pf 1) calculate beta cutoff frequency of BJT,unity gain frequency and diffusion capacitance
What is the net number of electrons per second that pass through the cross-section of a wire carrying 5 A of dc current The current now is due to electrons, and the magnitude of the charge of each electron is 1.60×10?19 C.
A plane wave in air with an electric field amplitude of 20 V/m is incident normally upon the surface of a lossless, nonmagnetic medium with Xr er = 25. Determine the following: a.) reflection and transmission coefficient
Suppose the transformer in this power system is changed from a Y-Y to a Y-D, with the Y-connection solidly grounded. Nothing else changes in the power system. Now suppose that a single-line-to-ground fault occurs on the 138 kV transmission line ne..
For each of the unit step responses shown in Figure , find the transfer function of the system.
A 100 hp, 3 phase induction motor, operating at the rated load, runs at 423 rpm when connected across a 450 V, 60Hz supply. The slip at this load is 0.06. Determine A). Synchronous Speed B). Number of stator poles
How much potential energy is contained in the arrangement of 1 µC charges at spherical coordinates (1m,π/2, 0), (1m,π/2,π/2), (1m,π/2, π) , and (1m,π/2,3π/2 )?
The junction capacitance of a silicon pn junction is 1.83 pF at T = 300 K when the anode and cathode are held at the same voltage. The concentration of donor atoms in the n-region of the junction is 1016 cm ^-3
The Si transistor of given figure has β= 50 and negligible leakage current.- Find RB so that ICQ = 2 mA.- Determine the value of VCEQ for VB.
A pn junction may be formed by depositing a single crystal film of uniformly doped p-silicon onto a substrate that has been doped n-type. The substrate is 500um thick, and the film is 20um thick. The substrate has a 5 ohm-cm resistivity.
A balanced star- connected load of impedance (6+8j) ohms per phase is connected to a 3- phase, 240 v, 50 HZ supply.- Find the line current and power absorbed by each phase.
A silver(Ag) electrode and a zinc(Zn) electrode are placed in the same electrolyte and connected to a voltmeter in a voltaic cell. The resistance of the volt bridge and electrolyte solution is 5k Ohm.
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