Calculate the flat band potential and the threshold voltage

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Calculate the FLAT BAND POTENTIAL and the THRESHOLD VOLTAGE for a real n+ polysilicon / p- silicon MOS diode having Na= 1017 cm^-3 and oxide thickness d = 5 nm. Assume that the oxide has only fixed oxide charges (Qf), whose density is 5x1011 cm^-2. The work function difference as a function of background impurity concentration (Work func. ms) is -1V. The relative dielectric constant of SiO2 is 3.9.

Reference no: EM13247448

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