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A solar cell at 300K has an open circuit voltage of 0.55V and short circuit current of 2A with ideality factor of 1.3
Calculate Fill Factor and maximum power output under the following conditions:
1. Series resistance 0.08 Ohm, shunt resistance very large
2. Series resistance negligible, shunt resistance 1 Ohm
3. Series resistance 0.08 Ohm, shunt resistance 2 Ohm
Consider a network with a driving-impedance Z. (1) Find expression for P and Q. (2) Find p(t) in terms of P and Q. (3) Suppose that the network is a series RLC. Interpret the result in part (2).
Identify the types of system-building methods used by Dorfman to build its wireless warehouse system.
Use the Z-transform of u[n] and properties of the Z-transform to find X(z). Verify that the expressions obtained above for X(z) are identical.
To digitally manipulate information we must encode it using binary numbers. Consider an encoding for playing cards. There are 52 cards in a deck and they are divided
An ideal p-n junction diode has saturation current Is = 3e-15 A. Calculate the diode current.
Consider a satellite communication link with a one way propagation delay of 300ms between the sender and receiver, operating at 10Mbps using packets of length 1500bytes. Length of the ACK packet is also 1500 bytes.
The following measurement were made on a two-port resistive circuit. With port 1 open, V2 =15V, V1 = 10 V, and I2 = 30 A. With port 1 short-circuited, V2 = 10 V, I2 =4 A, and I1 = -5 A. Find the parameters of the z-parameter two-port.
What RF bandwidth must the radio link provide if the modulation is binary phase shift keying (BPSK)?
What is the system's Nyquist sample rate if ω0 = 1000/(2π) rad/sec.?
A 5 KVA 480/120 V single phase transformer is to be used as an autotransformer to transform a 600 V source to a 480 V supply. As a single phase transformer delivering rated load at 0.8 PF Lag its efficiency.
Assume that the Fermi energy level for a particular material is 6.25eV and that the electrons in this material follow the Fermi-Dirac distribution function. Calculate the temperature at which there is a 1% probability that a state 0.30eV
Power Electronics - Diode, [Power electronics] The measured values of a diode at a temperature of 25 Degrees Celsius are: Vd=1V at Id=50A, Vd=1.5V at Id=600A. Determine (i) the emission coefficient n, and (ii) the leakage current.
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