Calculate built-involtage and donor concentration on n-sid

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A Si abrupt p-n junction has No = 3 x 1018cm-3 on the p-side and an area of 1.6 x 10-3 cm2. Thejunction capacitance is 18 pF at a reverse bias of 3.2 V and 12 pF at 8.2 V. Calculate the built-involtage and the donor concentration on the n-sid.

Reference no: EM13848044

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